The FDS6670AS is a PowerTrench® MOSFET from Fairchild Semiconductor (now part of ON Semiconductor). This MOSFET is designed for use in high-speed switching applications. It features low gate charge and low on-resistance, making it suitable for power management in various electronic devices.
### Key Features:
1. **Type**: N-Channel MOSFET
2. **Package**: SOIC-8 (Small Outline Integrated Circuit, 8 pins)
3. **Drain-Source Voltage (Vds)**: 30V
4. **Continuous Drain Current (Id)**: 10A (at 25°C)
5. **On-Resistance (Rds(on))**: 0.012Ω (typical at Vgs = 10V)
6. **Gate Threshold Voltage (Vgs(th))**: 1.0V to 3.0V
7. **Power Dissipation (Pd)**: 2W
8. **Gate Charge (Qg)**: Low, making it efficient for switching applications
### Pin Configuration:
- **8 Pins** in SOIC package:
- **Pins 1, 2, 3**: Source (S)
- **Pin 4**: Gate (G)
- **Pins 5, 6, 7, 8**: Drain (D)
### Applications:
- DC-DC converters
- Load switches
- Motor control
- Power management in portable devices
- Synchronous rectification in power supplies
### Electrical Characteristics:
- **Maximum Drain-Source Voltage (Vds)**: 30V
- **Maximum Gate-Source Voltage (Vgs)**: ±20V
- **Maximum Continuous Drain Current (Id)**: 10A (at 25°C)
- **Rds(on)**: 0.012Ω at Vgs = 10V, 0.018Ω at Vgs = 4.5V
### Important Notes:
- Ensure proper heat sinking to maintain thermal performance.
- Follow standard ESD precautions when handling the MOSFET.
- Utilize gate resistors to control the gate drive and reduce switching noise.
### Datasheet Reference:
For detailed specifications, application notes, and thermal characteristics, refer to the datasheet provided by Fairchild Semiconductor (ON Semiconductor).
This MOSFET is widely used in various electronic circuits due to its efficiency and compact size, making it a reliable choice for power management and switching applications. If you need further information or assistance with a specific aspect of using this MOSFET, please let me know!
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